PN3567_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTORS

PN3567
PN3568
PN3569
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN3567 series
devices are silicon NPN small signal transistors
designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
PN3567 PN3568 PN3569
80
80
80
40
60
40
5.0
500
100
625
-65 to +150
UNITS
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=40V
ICBO
VCB=40V, TA=75°C
IEBO
VEB=4.0V
BVCBO
IC=100μA
80
BVCEO
IC=30mA (PN3568)
60
BVCEO
IC=30mA (PN3567, PN3569)
40
BVEBO
IE=10μA
5.0
VCE(SAT) IC=150mA, IB=15mA
VBE(ON)
VCE=1.0V, IC=150mA
hFE
VCE=1.0V, IC=30mA (PN3567, PN3568) 40
hFE
VCE=1.0V, IC=30mA (PN3569)
100
hFE
VCE=1.0V, IC=150mA (PN3567, PN3568) 40
hFE
VCE=1.0V, IC=150mA (PN3569)
100
Cob
VCB=10V, IE=0, f=140kHz
Cib
VEB=0.5V, IC=0, f=140kHz
fT
VCE=10V, IC=50mA, f=20MHz
60
MAX
50
5.0
25
250
1.1
120
300
20
80
600
UNITS
nA
μA
nA
V
V
V
V
mV
V
pF
pF
MHz
R1 (16-December 2013)