PN2484_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

PN2484
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN2484 type is an
NPN silicon transistor designed for low noise amplifier
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
60
6.0
50
625
-65 to +150
200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=45V
ICBO
VCB=45V, TA=150°C
ICEO
VCE=5.0V
IEBO
VEB=5.0V
BVCBO
IC=10μA
60
BVCEO
IC=10mA
60
BVEBO
IE=10μA
6.0
VCE(SAT) IC=1.0mA, IB=100μA
VBE(ON)
VCE=5.0V, IC=100μA
0.5
hFE
VCE=5.0V, IC=1.0μA
30
hFE
VCE=5.0V, IC=10μA
100
hFE
VCE=5.0V, IC=10μA, TA=-55°C
20
hFE
VCE=5.0V, IC=100μA
175
hFE
VCE=5.0V, IC=500μA
200
hFE
VCE=5.0V, IC=1.0mA
250
hFE
VCE=5.0V, IC=10mA
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
150
fT
VCE=5.0V, IC=50μA, f=5.0MHz
15
fT
VCE=5.0V, IC=0.5mA, f=30MHz
60
hie
VCE=5.0V, IC=1.0mA, f=1.0kHz
3.5
hoe
VCE=5.0V, IC=1.0mA, f=1.0kHz
hre
VCE=5.0V, IC=1.0mA, f=1.0kHz
Cob
VCB=5.0V, IE=0, f=140kHz
Cib
VEB=0.5V, IC=0, f=140kHz
MAX
10
10
2.0
10
0.35
0.7
500
800
900
24
40
800
6.0
6.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
V
MHz
MHz
kΩ
μS
x10^-6
pF
pF
R0 (30-May 2012)