PMD18K Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON POWER DARINGTON TRANSISTORS

PMD18K SERIES NPN
PMD19K SERIES PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PMD18K, PMD19K
series types are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for power switching applications.
These devices are designed to be electrical/mechanical
equivalents to Lambda part numbers.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation (TC=50°C)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
_JC
PMD18K80 PMD18K100
PMD19K80 PMD19K100
80
100
80
100
80
100
5.0
30
60
750
240
-65 to +200
0.625
UNITS
V
V
V
V
A
A
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICER
VCE=54V, RBE=2.2kΩ (PMD18K, 19K80)
ICER
VCE=67V, RBE=2.2kΩ (PMD18K, 19K100)
IEBO
VEB=5.0V
BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K80) 80
BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K100) 100
BVCEO IC=100mA (PMD18K, 19K80)
80
BVCEO IC=100mA (PMD18K, 19K100)
100
VCE(SAT) IC=15A, IB=60mA
VBE(SAT) IC=15A, IB=60mA
VBE(ON) VCE=3.0V, IC=15A
hFE
VCE=3.0V, IC=15A (PMD18K series)
1.0K
hFE
VCE=3.0V, IC=15A (PMD19K series)
800
hfe
VCE=3.0V, IC=9.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=9.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
10
10
3.0
2.0
2.8
2.8
20K
20K
600
UNITS
mA
mA
mA
V
V
V
V
V
V
V
MHz
pF
R1 (2-October 2012)