PMD16K Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON POWER DARLINGTON TRANSISTORS

PMD16K SERIES NPN
PMD17K SERIES PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PMD16K, PMD17K
series types are complementary silicon Darlington power
transistors, manufactured by the epitaxial base process,
mounted in a hermetically sealed metal package, and
designed for power switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
_JC
PMD16K60
PMD17K60
60
60
PMD16K80
PMD17K80
80
80
5.0
20
40
500
200
-65 to +200
0.875
PMD16K100
PMD17K100 UNITS
100
V
100
V
V
A
A
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICER
VCE=Rated VCEO, RBE=1.0kΩ
ICER
VCE=Rated VCEO, RBE=1.0kΩ, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=100mA (PMD16K60, 17K60)
60
BVCEO IC=100mA (PMD16K80, 17K80)
80
BVCEO IC=100mA (PMD16K100, 17K100)
100
VCE(SAT) IC=10A, IB=40mA
VBE(SAT) IC=10A, IB=40mA
VBE(ON) VCE=3.0V, IC=10A
hFE
VCE=3.0V, IC=10A (PMD16K series)
1.0K
hFE
VCE=3.0V, IC=10A (PMD17K series)
800
hfe
VCE=3.0V, IC=7.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=7.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
1.0
5.0
2.0
2.0
2.8
2.8
20K
20K
400
UNITS
mA
mA
mA
V
V
V
V
V
V
MHz
pF
R1 (26-November 2012)