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PB_CEDM7002AE-1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 60V, 300mA N-Channel MOSFET | |||
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Product Brief
CEDM7002AE
60V, 300mA N-Channel MOSFET
in SOT-883L package
Central Semiconductorâs CEDM7002AE is a special ESD protected
version of the 2N7002 enhancement-mode N-channel MOSFET
designed for high speed pulsed amplifier and driver applications.
SOT-883L
Top View
Bottom View
Typical Electrical Characteristics
Features:
⢠ESD protection up to 1800V
⢠350mW power dissipation
⢠Low gate charge
⢠Low rDS(ON)
Applications:
⢠Load/Power switches
⢠DC-DC converter circuits
⢠Power management
Benefits:
⢠Energy efficiency
⢠Enhanced electrical specifications
Package Proï¬le Comparison:
The SOT-883L utilizes 91% less board space than the SOT-23
1.05
mm
0.65
mm
3.05mm
Samples
SOT-883L
2.49mm
SOT-23
The SOT-882L has a 63% lower proï¬le than the SOT-23
To request samples visit:
www.centralsemi.com/info/CMPDM7002AE
0.4mm
SOT-883L
SOT-23
1.09mm
Weblink
Use QR reader
for direct link to
product web page,
or use: www.centralsemi.com/info/CEDM7002AE
Literature:
New
SMD
SELECTION
GUIDE
Order your selection guide today.
Visit: web.centralsemi.com/search/sample.php
Maximum Ratings (TA = 25ËC unless otherwise noted)
VDS
ID
PD
TJ, Tstg
(V)
MAX
(mA)
MAX
(mW)
MAX
(ËC)
MAX
BVDSS
(V)
MIN
Electrical Characteristics: (TA = 25ËC unless otherwise noted)
VGS(th)
rDS(ON)
@ VGS @ ID
Qgs
(Note 1)
(V)
(Ω) (Ω)
(V) (mA)
(nC)
MIN MAX TYP MAX
TYP
Ciss
(pF)
MAX
*1.0 *1.4
10
500
60
300
100
-65 to +150
*60
1.2
2.0
1.1
1.8
5.0
100
0.2
50
3.0
6.0
2.5
10
*Enhanced electrical specifications
(NOTE 1: tp=380μs)
145 Adams Avenue ⢠Hauppauge ⢠New York ⢠11788 ⢠USA ⢠www.centralsemi.com
Crss
(pF)
MAX
5.0
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