PB_CDM22010-1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 650V, 10A N-Channel Power MOSFET

Product Brief
CDM22010-650
TO-220
650V, 10A N-Channel Power MOSFET
in the TO-220 package
Central Semiconductor’s CDM22010-650 is a high current, 650
Volt N-Channel power MOSFET designed for high voltage, fast
switching applications such as Power Factor Correction (PFC),
lighting and power inverters. This MOSFET combines high voltage
capability with low rDS(ON), low threshold voltage and low gate
charge.
Features:
• High voltage capability
• Low gate charge
• Low r_DS(ON)
Applications:
• Power Factor Correction (PFC)
• Motor drives
• Alternative energy inverters
• Solid state lighting
Benefits:
• Energy efficiency
• High power density
Also available:
Surface Mount 650V MOSFETs
CDM4-650
(4.0A, N-Channel)
CDM7-650
(7.0A, N-Channel)
Typical Electrical Characteristics
Looking for other through-hole devices?
Easily search for through-hole devices with
Central’s online Parametric Search.
www.centralsemi.com/parasearch
DPAK package
www.centralsemi.com/CDM_Series
Maximum Ratings (TA = 25˚C unless otherwise noted)
ID
(A)
MAX
PD
(W)
MAX
TJ, Tstg
(˚C)
MAX
Θ_JA
(˚C/W)
MAX
10
2.0
-55 to +150
62.5
BVDSS
(V)
MIN
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
MIN TYP MAX
r_DS(ON)
(Ω)
(Ω)
TYP MAX
@ VGS
(V)
@ ID
(A)
Qgs
(nC)
TYP
650 2.0 2.8 4.0 0.88
1.0
10
5.0
8.0
Ciss
(pF)
TYP
1168
Crss
(pF)
TYP
1.2
Services:
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development /
Multi Discrete Modules (MDM™)
Weblink/Samples:
For more information
or to request
samples visit:
www.centralsemi.com/info/THHPMOSFET
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com