PBCDM4_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 600V, N-Channel UltraMOS™ Power MOSFETs

Product Brief
CDM4-600LR (4A)
DPAK
CDM7-600LR ^(7A)
600V, N-Channel UltraMOS^™ Power MOSFETs in the DPAK package
Central Semiconductor’s CDM4-600LR (4A, 600V) and CDM7-600LR
(7A, 600V) are 600 Volt N-Channel MOSFETs designed for high
voltage, fast switching applications such as Power Factor Correction
(PFC), lighting, and power inverters. These MOSFETs combine high
voltage capability with ultra low rDS(ON), low threshold voltage, and
low gate charge for optimal efficiency.
Features:
• High voltage capability
• Low gate charge
• Ultra Low r_DS(ON)
Applications:
• Power Factor Correction (PFC)
• Solid State Lighting (SSL)
• Alternative energy inverters
Benefits:
• Energy efficiency
• High power density
• Industry standard DPAK package
Also available:
Through-hole 600V Low r_DS(ON) MOSFET
CDM22011-600LRFP
(11A, N-Channel)
Typical Electrical Characteristics
CDM4-600LR Drain Source On Resistance
CDM7-600LR Drain Source On Resistance
TO-220FP package
www.centralsemi.com/UltraMOS
Type No.
Maximum Ratings (TA = 25˚C unless otherwise noted)
ID
PD
TJ, Tstg
Θ_JA
BVDSS
(A)
(W)
(˚C)
(˚C/W)
(V)
MAX
MAX
MAX
MAX
MIN
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
r_DS(ON)
(Ω)
(Ω)
@ VGS
(V)
@ ID
(A)
Qgs
(nC)
MIN MAX TYP MAX
TYP
Ciss
(pF)
TYP
Crss
(pF)
TYP
CDM4-600LR
4.0
38 -55 to +150
110
600
2.0 4.0 0.65
0.95
10
2.0
2.04
328 1.31
CDM7-600LR
7.0
60 -55 to +150
110
600
2.0 4.0 0.53
0.58
10
3.5
2.62
440 1.94
Services:
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development /
Multi Discrete Modules (MDM™)
Weblink/Samples:
For more information
or to request
samples visit:
www.centralsemi.com/info/UltraMOS
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com