PBCDM4-650CDM7_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 650V Medium Power MOSFETs

Product Brief
CDM4-650 (4.0A, N-Channel)
DPAK
CDM7-650 ^{(7.0A, N-Channel)}
650V Medium Power MOSFETs in the DPAK package
Central Semiconductor’s CDM4-650 (4A, 650V, N-Channel) and
CDM7-650 (7A, 650V, N-Channel) are medium power MOSFETs
designed for high voltage, fast switching applications such as
Power Factor Correction (PFC), lighting and power inverters. These
MOSFETs combine high voltage capability with low r_DS(ON), low
threshold voltage, and low gate charge for optimal energy efficiency.
Features:
• High voltage capability
• Low gate charge
• Low r_DS(ON)
Applications:
• Power Factor Correction (PFC)
• Solid state lighting
• Alternative energy inverters
Benefits:
• Energy efficiency
• High power density
• Industry standard DPAK package
Typical Electrical Characteristics
CDM4-650 Typical Output Characteristics
CDM7-650 Typical Output Characteristics
Samples
To order samples of this device visit:
www.centralsemi.com/info/CDM
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product web page,
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Type No.
Maximum Ratings (TA = 25˚C unless otherwise noted)
ID
PD
TJ, Tstg
Θ_JA
BVDSS
(A)
(W)
(˚C)
(˚C/W)
(V)
MAX
MAX
MAX
MAX
MIN
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
r_DS(ON)
(Ω)
(Ω)
@ VGS
(V)
@ ID
(A)
Qgs
(nC)
MIN MAX TYP MAX
TYP
Ciss
(pF)
TYP
Crss
(pF)
TYP
CDM4-650
4.0
1.13 -55 to +150
110
650 2.0 4.0 2.44
2.7
10
2.0
3.0
463 1.0
CDM7-650
7.0
1.13 -55 to +150
110
650 2.0 4.0 1.35
1.5
10
3.5
5.0
754 0.8
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com