PBCDM3_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 800V, 3A N-Channel Power MOSFET

Product Brief
CDM3-800
800V, 3A N-Channel Power MOSFET
in the DPAK package
Central Semiconductor’s CDM3-800 is an 800 volt N-Channel
MOSFET ideal for high voltage, fast switching applications such
as Power Factor Correction (PFC), Solid State Lighting (SSL), and
power inverters. This MOSFET combines high voltage capability
with low rDS(ON), low threshold voltage, and low gate charge for
optimal efficiency.
Features:
• High voltage capability
• Low gate charge
• Low r_DS(ON)
Applications:
• Power Factor Correction (PFC)
• Alternative energy inverters
• Solid State Lighting (SSL)
Benefits:
• Energy efficiency
• High power density
• Industry standard DPAK package
5A and 8A versions available in TO-220FP
CDM2205-800FP
(5A, 800V N-Channel)
CDM2208-800FP
(8A, 800V N-Channel)
DPAK
Typical Electrical Characteristics
TO-220FP package
www.centralsemi.com/HVMOS
Maximum Ratings (TA = 25˚C unless otherwise noted)
ID
(A)
MAX
PD
(W)
MAX
TJ, Tstg
(˚C)
MAX
Θ_JA
(˚C/W)
MAX
BVDSS
(V)
MIN
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
MIN TYP MAX
r_DS(ON)
(Ω)
(Ω)
TYP MAX
@ VGS
(V)
@ ID
(A)
Qgs
(nC)
TYP
Ciss
(pF)
TYP
Crss
(pF)
TYP
3.0
80
-55 to +150
110
800 2.0 3.0 4.0
3.8
Services:
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development /
Multi Discrete Modules (MDM™)
4.8
10
1.5
*2.55
415
1.5
* Note 2: Pulse Width < 300μs, Duty Cycle < 2%
Weblink/Samples:
For more information
or to request
samples visit:
www.centralsemi.com/info/HVMOS
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com