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PBCBRHDSH1_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Low forward voltage | |||
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Product Brief
CBRHDSH1-40L CBRHDSH1-100
CBRHDSH1-60 CBRHDSH1-200
Extended
Range:
200 Volts
1.0A, 40V thru 200V Schottky Bridge Rectiï¬er
HD DIP
in the HD DIP package
Central Semiconductorâs CBRHDSH1 series of full wave bridge
rectifiers offer a broad selection of voltages, including the new
200V CBRHDSH1-200. These devices are designed for high
voltage rectification applications where energy efficiency is a key
design requirement.
Typical Electrical Characteristics
Features:
⢠Low forward voltage
⢠Low leakage current
⢠High current rating
⢠High voltage rating
Applications:
⢠Input rectification for LED lighting
⢠Power over ethernet (PoE) peripherals
⢠General purpose full wave rectification
Benefits:
⢠Energy efficiency
⢠Low total conduction losses
⢠Industry standard package/footprint
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Use QR reader
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product web page.
Samples
To order samples of this device visit:
www.centralsemi.com/info/CBRHDSH1
CBRHDSH1-40L
VRRM
(V)
MAX
40
CBRHDSH1-60
60
CBRHDSH1-100
100
CBRHDSH1-200
200
Maximum Ratings (TA = 25ËC)
IO
TJ
Tstg
(A)
MAX
(ËC)
MAX
(ËC)
MAX
ÎJA
(ËC/W)
MAX
1.2 -50 to +125 -50 to +150
85
1.0 -50 to +125 -50 to +150
85
1.0 -50 to +125 -50 to +150
85
1.0 -50 to +125 -50 to +150
85
(V)
TYP
0.36
0.39
0.43
0.5
0.65
0.7
0.76
Electrical Characteristics (TA = 25ËC unless otherwise noted)
VF
(V)
MAX
@ IF
(A)
IR
*TA = 100ËC
(μA)
(μA)
TYP
MAX
@ VR
(V)
0.38
0.5
20
50
40
0.44
1.0
*5.0mA
*20mA
40
0.5
0.5
7.0
20
60
0.6
1.0
*2.0mA
*10mA
60
0.7
0.5
0.04
10
100
0.75
1.0
â
*20mA
100
0.9
1.0
0.2
50
200
â
*20mA
200
145 Adams Avenue ⢠Hauppauge ⢠New York ⢠11788 ⢠USA ⢠www.centralsemi.com
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