PB-CMLDM3737_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Dual, Complementary MOSFETs

Product Brief
CMLDM3737 (N-Channel)
CMLDM5757 (P-Channel)
Dual, Complementary MOSFETs
in miniature SOT-563 package
Central Semiconductor’s CMLDM3737 (N-Channel) and
complementary CMLDM5757 (P-Channel) are dual 20V,
540mA (N-channel) and 20V, 430mA (P-Channel) MOSFETs
in the miniature, SOT-563 surface mount package.
CMLDM3737 and CMLDM5757 are ideal solutions for design
engineers seeking energy efficient MOSFETs in a
small package.
Features:
• ESD protection up to 2kV
• 350mW Power dissipation
• Low threshold voltage
• Logic gate charge
• Very Low rDS(ON)
Applications:
• Load Switch/Level Shifting
• Battery charging
• Boost switch
• Electro-luminescent backlighting
Benefits:
• Space saving miniature package
• Complementary N-Channel and P-Channel devices
• Energy efficiency
SOT-563
N-Channel
P-Channel
Typical Electrical Characteristics
Samples and Literature
New
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SELECTION
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BVDSS
(V)
MIN
N-Channel
20
P-Channel
20
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
ID
(mA)
VGS(th)
(V)
rDS(ON)
(Ω)
@ VGS
(V)
@ ID
(mA)
MAX
MIN
MAX
MAX
0.55
4.5
540
540
0.45
1.0
0.7
2.5
500
0.9
1.8
350
0.9
4.5
430
430
0.45
1.0
1.2
2.5
300
2.0
1.8
150
Ciss
(pF)
MAX
150
175
Qg(tot)
(nC)
TYP
Thermal Characteristics
PD
(mW)
TJ, Tstg
(˚C)
MAX
MAX
1.58
350
-65 to +150
1.2
350
-65 to +150
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com