PB-CMKDM8005_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 20V, 650mA Dual, P-Channel MOSFET

Product Brief
CMKDM8005
20V, 650mA Dual, P-Channel MOSFET
in SOT-363 package
Central Semiconductor’s CMKDM8005 consists of two 20V,
650mA P-Channel MOSFETs with exceptionally low rDS(ON)
and low threshold voltage. This device packaged in the very
small SOT-363, is an ideal solution for design engineers seeking
energy efficient MOSFETs for space constrained applications.
Features:
• ESD protection up to 2kV
• Low r_DS(ON)
• Low threshold voltage
• Logic level compatible
• Low gate charge
• Drain current of 650mA per MOSFET
Applications:
• High speed pulsed amplifiers
• Load/Power switches
• Boost and buck converter circuits
• Power management
• Motor drives
Benefits:
• Closely matched characteristics
• Energy efficiency
• Integrated transient protection
• Industry standard SOT-363 package
• Strain relief gull wing configuration
Literature:
New
SMD
SELECTION
GUIDE
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SOT-363
Typical Electrical Characteristics
Curve is applicable to individual MOSFETs
Samples:
To order samples of this device visit:
www.centralsemi.com/info/CMKDM8005
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BVDSS
(V)
MIN
20
ID
(mA)
MAX
650
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
rDS(ON)
(Ω)
(Ω)
@ VGS
(V)
@ ID
(mA)
MIN
MAX
TYP
MAX
0.5
1.0
0.25
0.36
4.5
350
0.37
0.5
2.5
300
Qgs
(nC)
TYP
0.24
Ciss
(pF)
TYP
100
Crss
(pF)
TYP
25
Thermal Characteristics
PD
(mW)
TJ, Tstg
(˚C)
MAX
MAX
350
-65 to +150
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com