PB-CEDM7004VL_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 30V, 450mA MOSFETs

Product Brief
CEDM7004VL (N-Channel)
CEDM8004VL (P-Channel)
30V, 450mA MOSFETs
in the very low profile SOT-883VL package
Central Semiconductor’s CEDM7004VL (N-Channel) and
CEDM8004VL (P-Channel) are Enhancement-mode MOSFETs
packaged in the very low profile SOT-883VL case. These devices
are designed for space constrained high speed amplifier and driver
applications where package height is a critical design element.
These MOSFETs offers low rDS(ON) and low gate charge.
Features:
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
Applications:
• Load/Power switches
• DC-DC converters
• Power management
Benefits:
• High power density
• Very low package profile (0.32mm)
• Space saving surface mount package
Package Profile Comparison:
The SOT-883VL has a 46% lower profile than the SOT-883 and
a 20% lower profile than the SOT-883L.
0.6mm
0.4mm
0.32mm
SOT-883VL
Top View
Bottom View
Typical Electrical Characteristics
CEDM7004VL (N-Channel)
CEDM8004VL (P-Channel)
SOT-883
SOT-883L
SOT-883VL
Type No.
Maximum Ratings (TA = 25˚C)
ID
(mA)
PD
(mW)
TJ, Tstg
(˚C)
MAX
MAX
MAX
CEDM7004VL
450
100
-65 to +150
CEDM8004VL
450
100
-65 to +150
BVDSS
(V)
MIN
30
30
Electrical Characteristics: (TA = 25˚C)
VGS(th)
(V)
r_DS(ON)
(Ω)
(Ω)
@ VGS
(V)
@ ID
(mA)
MIN MAX TYP MAX
0.28
0.46
4.5
200
0.5 1.0
0.39
0.56
2.5
100
0.55
0.73
1.8
75
1.0
1.1
4.5
430
0.5 1.0
1.6
2.0
2.5
200
2.6
3.3
1.8
100
Qgs
(nC)
TYP
0.15
Ciss
(pF)
TYP
Crss
(pF)
TYP
43 5.0
0.35
45
8.9
Services:
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development /
Multi Discrete Modules (MDM™)
• Bare Die for Hybrid Applications
Weblink/Samples:
For more information
or to request
samples visit:
www.centralsemi.com/info/LPMOSFETs
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com