PB-CEDM7001VL_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 20V, 100mA, MOSFETs

Product Brief
CEDM7001VL (N-Channel)
CEDM8001VL (P-Channel)
20V, 100mA, MOSFETs
in the very low profile SOT-883VL package
Central Semiconductor’s CEDM7001VL (N-Channel) and
CEDM8001VL (P-Channel) are Enhancement-mode MOSFETs
packaged in the very low profile SOT-883VL case. These devices
are designed for space constrained high speed amplifier and driver
applications where package height is a critical design element.
These MOSFETs offers low rDS(ON) and low gate charge.
Features:
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
Applications:
• Load/Power switches
• DC-DC converters
• Power management
Benefits:
• High power density
• Very low package profile (0.32mm)
• Space saving surface mount package
Package Profile Comparison:
The SOT-883VL has a 46% lower profile than the SOT-883 and
a 20% lower profile than the SOT-883L.
0.6mm
0.4mm
0.32mm
SOT-883VL
Top View
Bottom View
Typical Electrical Characteristics
CEDM7001VL (N-Channel)
CEDM8001VL (P-Channel)
SOT-883
SOT-883L
SOT-883VL
Type No.
Maximum Ratings (TA = 25˚C)
ID
(mA)
PD
(mW)
TJ, Tstg
(˚C)
MAX
MAX
MAX
CEDM7001VL
100
100
-65 to +150
CEDM8001VL
100
100
-65 to +150
BVDSS
(V)
MIN
20
20
Electrical Characteristics: (TA = 25˚C)
VGS(th)
(V)
r_DS(ON)
(Ω)
(Ω)
@ VGS
(V)
@ ID
(mA)
MIN MAX TYP MAX
0.6 0.9
0.9
1.3
3.0
4.0
4.0
2.5
10
10
0.6 1.1
1.9
2.4
8.0
12
4.0
2.5
10
10
Qgs
(nC)
TYP
0.16
Ciss
(pF)
TYP
Crss
(pF)
TYP
9.0 4.0
0.158 45
15
Services:
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development /
Multi Discrete Modules (MDM™)
• Bare Die for Hybrid Applications
Weblink/Samples:
For more information
or to request
samples visit:
www.centralsemi.com/info/LPMOSFETs
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com