PB-CDM22011_1509 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 600V, 11A N-Channel UltraMOS™ Power MOSFET

Product Brief
CDM22011-600LRFP
600V, 11A N-Channel UltraMOS^™ Power MOSFET
in the TO-220FP package
TO-220FP
Central Semiconductor’s CDM22011-600LRFP is a 600 volt
N-Channel MOSFET designed for high voltage, fast switching
applications such as Power Factor Correction (PFC), lighting, and
power inverters. This MOSFET combines high voltage capability
with ultra low rDS(ON), low threshold voltage, and low gate charge
for optimal efficiency.
Typical Electrical Characteristics
Features:
• High voltage capability
• Low gate charge
• Ultra low r_DS(ON)
Applications:
• Power Factor Correction (PFC)
• Alternative energy inverters
• Solid State Lighting (SSL)
Benefits:
• Energy efficiency
• High power density
Also available:
Surface Mount 600V Low r_DS(ON) MOSFETs
CDM4-600LR
(4A, N-Channel)
CDM7-600LR
(7A, N-Channel)
DPAK package
www.centralsemi.com/UltraMOS
Maximum Ratings (TA = 25˚C unless otherwise noted)
ID
(A)
MAX
PD
(W)
MAX
TJ, Tstg
(˚C)
MAX
Θ_JA
(˚C/W)
MAX
11
25
-55 to +150
120
BVDSS
(V)
MIN
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
MIN TYP MAX
r_DS(ON)
(Ω)
(Ω)
TYP MAX
@ VGS
(V)
@ ID
(A)
Qgs
(nC)
TYP
600
2.0 3.09 4.0
0.30
0.36
10
5.5
4.45
Ciss
(pF)
TYP
763
Crss
(pF)
TYP
2.76
Services:
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development /
Multi Discrete Modules (MDM™)
Weblink/Samples:
For more information
or to request
samples visit:
www.centralsemi.com/info/UltraMOS
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com