MPS712 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP DARLINGTON TRANSISTOR

DATA SHEET
MPS712
PNP DARLINGTON TRANSISTOR
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MPS712 is a silicon PNP Darlington Transistor, manufactured by the
epitaxial planar process, designed for applications requiring extremely high gain.
MAXIMUM RATINGS (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ_JA
80
60
10
800
2.0
1.0
-65 to +150
125
UNITS
V
V
V
mA
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
TEST CONDITIONS
VCB=60V
VEB=8.0V
IC=10µA
IC=10mA
IE=10µA
IC=800mA, IB=8.0mA
VCE=5.0V, IC=800mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500mA
MIN
MAX
UNITS
100
nA
100
nA
80
V
60
V
10
V
1.25
V
1.80
V
5K
10K
(SEE REVERSE SIDE)
R0