MPS6520 Datasheet, PDF (1/3 Pages) Motorola, Inc – Amplifier Transistors

MPS6520
MPS6521
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPS6520 and
MPS6521 are silicon NPN epitaxial transistors designed
for complementary amplifier applications requiring
low noise and high DC current gains. The PNP
complementary devices are MPS6522 and MPS6523
respectively.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
40
25
4.0
100
625
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
ICBO
VCB=30V, TA=60°C
BVCEO
IC=500μA
25
BVEBO
IE=10μA
4.0
VCE(SAT) IC=50mA, IB=5.0mA
fT
VCE=10V, IC=2.0mA
300
fT
VCE=10V, IC=10mA
400
Cob
VCB=10V, IE=0, f=100kHz
NF
VCE=5.0V, IC=10μA,
RS=10KΩ, BW=15.7kHz,
3.0dB points @ 10Hz and 10kHz
MAX
50
1.0
0.5
3.5
3.0
SYMBOL
hFE
hFE
TEST CONDITIONS
VCE=10V, IC=100μA
VCE=10V, IC=2.0mA
MPS6520
MIN MAX
100
-
200 400
MPS6521
MIN MAX
150
-
300 600
UNITS
V
V
V
mA
mW
°C
UNITS
nA
μA
V
V
V
MHz
MHz
pF
dB
R1 (11-November 2014)