MPS6512 Datasheet, PDF (1/2 Pages) Micro Electronics – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

DATA SHEET
NPN
MPS6512
MPS6513
MPS6514
MPS6515
PNP
MPS6516
MPS6517
MPS6518
MPS6519
COMPLEMENTARY
SILICON TRANSISTORS
JEDEC TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon
Small Signal Transistors designed for general-purpose amplifier applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ,Tstg
Θ_JC
Θ_JA
MPS6512
MPS6513
40
30
MPS6514
MPS6515
40
MPS6516
MPS6517
MPS6518
40
25
40
4.0
100
625
1.5
-65 to +150
83.3
200
MPS6519
25
25
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MPS6512
MPS6513
MIN MAX
MPS6514
MPS6515
MIN MAX
MPS6516
MPS6517
MPS6518
MIN MAX
MPS6519
MIN MAX
UNITS
ICBO
VCB=30V
50
50
50
-
nA
ICBO
VCB=20V
-
-
-
50
nA
BVCEO
IC=0.5mA
30
25
40
25
V
BVEBO
IE=10µA
4.0
4.0
4.0
4.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.5
0.5
0.5
0.5
V
Cob
VCB=10V, IE=0, f=100kHz
3.5
3.5
4.0
4.0
pF
SYMBOL
hFE
hFE
TEST CONDITIONS
VCE=10V, IC=2.0mA
VCE=10V, IC=100mA
MPS6512
MPS6516
MIN MAX
50 100
30
MPS6513
MPS6517
MIN MAX
90 180
60
MPS6514
MPS6518
MIN MAX
150 300
90
MPS6515
MPS6519
MIN MAX
250 500
150
(Continued)
R0