MPS650_15 Datasheet, PDF (1/5 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON TRANSISTORS

MPS650 MPS651 NPN
MPS750 MPS751 PNP
COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPS650, MPS750
series devices are complementary silicon transistors
designed for general purpose amplifier and switching
applications requiring high gain at high collector current.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
MPS650
MPS750
60
MPS651
MPS751
80
40
60
5.0
2.0
625
1.5
-65 to +150
200
83.3
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=60V
ICBO
VCB=80V
IEBO
VEB=4.0V
BVCBO
IC=100μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT) IC=1.0A, IB=100mA
VCE(SAT) IC=2.0A, IB=200mA
VBE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE=2.0V, IC=1.0A
hFE
VCE=2.0V, IC=50mA
hFE
VCE=2.0V, IC=500mA
hFE
VCE=2.0V, IC=1.0A
hFE
VCE=2.0V, IC=2.0A
fT
VCE=5.0V, IC=50mA, f=100MHz
MPS650
MPS750
MIN MAX
-
100
-
-
-
100
60
-
40
-
5.0
-
-
0.3
-
0.5
-
1.2
-
1.0
75
-
75
-
75
-
40
-
75
-
MPS651
MPS751
MIN MAX
-
-
-
100
-
100
80
-
60
-
5.0
-
-
0.3
-
0.5
-
1.2
-
1.0
75
-
75
-
75
-
40
-
75
-
UNITS
V
V
V
A
mW
W
°C
°C/W
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
V
MHz
R1 (2-December 2014)