MPQ7093_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR

MPQ7093
SILICON
HIGH VOLTAGE
QUAD PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ7093 is
comprised of four independent PNP silicon transistors
mounted in a 14-pin DIP, designed for high voltage
amplifier applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Power Dissipation (TC=25°C) (total package)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
250
250
5.0
500
750
1700
3.0
-65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=180V
IEBO
VEB=3.0V
BVCBO
IC=100μA
250
BVCEO
IC=1.0mA
250
BVEBO
IE=100μA
5.0
VCE(SAT) IC=20mA, IB=2.0mA
VBE(SAT) IC=20mA, IB=2.0mA
hFE
VCE=10V, IC=1.0mA
25
hFE
VCE=10V, IC=10mA
35
hFE
VCE=10V, IC=30mA
25
fT
VCE=20V, IC=10mA, f=100MHz
50
Cob
VCB=20V, IE=0, f=1.0MHz
Cib
VEB=3.0V, IC=0, f=1.0MHz
MAX
250
100
0.5
0.9
5.0
75
UNITS
V
V
V
mA
mW
mW
W
°C
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
R0 (14-June 2013)