MPQ6700_15 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SILICON COMPLEMENTARY QUAD TRANSISTOR

MPQ6700
SILICON
COMPLEMENTARY
QUAD TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ6700 is
comprised of two 2N3904 (NPN) chips and two 2N3906
(PNP) chips to be used as dual complementary
pairs for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
Thermal Resistance (total package)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=30V
IEBO
VEB=4.0V
BVCBO
IC=10μA
40
BVCEO
IC=10mA
40
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
hFE
VCE=1.0V, IC=0.1mA
30
hFE
VCE=1.0V, IC=1.0mA
50
hFE
VCE=1.0V, IC=10mA
70
fT
VCE=20V, IC=10mA, f=100MHz
200
Cob
VCB=5.0V, IE=0, f=100kHz
Cib
VEB=0.5V, IC=0, f=100kHz (NPN)
Cib
VEB=0.5V, IC=0, f=100kHz (PNP)
40
40
5.0
200
500
2.0
-65 to +150
62.5
MAX
50
50
0.25
0.90
4.5
8.0
10
UNITS
V
V
V
mA
mW
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
pF
R1 (7-February 2014)