MPQ6002_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON QUAD COMPLEMENTARY TRANSISTORS

MPQ6002
MPQ6502
SILICON QUAD
COMPLEMENTARY TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ6002 and
MPQ6502 types are silicon complementary pair transistors,
mounted in a 14 pin DIP package, designed for general
purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
Thermal Resistance (total package)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=50V
IEBO
VEB=3.0V
BVCBO
IC=10μA
60
BVCEO
IC=10mA
30
BVEBO
IE=10μA
5.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=300mA, IB=30mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=300mA, IB=30mA
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=300mA
30
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=2.0V, IC=0, f=1.0MHz
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
toff
VCC=30V, IC=150mA, IB1=IB2=15mA
60
30
5.0
500
650
1.25
-65 to +150
100
TYP
MAX
30
30
0.4
1.4
1.3
2.0
8.0
30
30
225
UNITS
V
V
V
mA
mW
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R1 (8-April 2013)