MPQ3906_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON QUAD TRANSISTOR

MPQ3906
PNP SILICON QUAD TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ3906 type is
comprised of four independent PNP silicon transistors
mounted in a 14-pin DIP, designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
40
40
5.0
200
500
2.0
-65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
IEBO
VEB=4.0V
BVCBO
IC=10μA
40
BVCEO
IC=1.0mA
40
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
hFE
VCE=1.0V, IC=0.1mA
40
hFE
VCE=1.0V, IC=1.0mA
60
hFE
VCE=1.0V, IC=10mA
75
fT
VCE=20V, IC=10mA, f=100MHz
200
Cob
VCB=5.0V, IE=0, f=140kHz
Cib
VBE=0.5V, IC=0, f=140kHz
ton
VBE=0.5V, IC=10mA, IB1=1.0mA
43
toff
IC=10mA, IB1=IB2=1.0mA
155
MAX
50
50
0.25
0.85
4.5
10
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
ns
ns
R1 (4-December 2012)