MPQ3904_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN QUAD TRANSISTOR

MPQ3904
SILICON
NPN QUAD TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ3904 type is
comprised of four independent silicon NPN transistors
mounted in a 14-pin DIP, designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
60
40
6.0
200
500
2.0
-65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=4.0V
BVCBO
IC=10μA
60
BVCEO
IC=1.0mA
40
BVEBO
IE=10μA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
hFE
VCE=1.0V, IC=0.1mA
30
hFE
VCE=1.0V, IC=1.0mA
50
hFE
VCE=1.0V, IC=10mA
75
fT
VCE=20V, IC=10mA, f=100MHz
250
Cob
VCB=5.0V, IE=0, f=140kHz
Cib
VEB=0.5V, IC=0, f=140kHz
ton
VBE=0.5V, IC=10mA, IB1=1.0mA
37
toff
IC=10mA, IB1=IB2=1.0mA
136
MAX
50
50
0.20
0.85
4.0
8.0
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
ns
ns
R1 (24-April 2013)