MPQ2907A_12 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON QUAD TRANSISTOR

MPQ2907A
PNP SILICON QUAD TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2907A type is
comprised of four independent PNP silicon transistors
mounted in a 14-pin DIP, designed for small signal,
general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
60
60
5.0
600
650
2.0
-65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
IEBO
VEB=3.0V
BVCBO
IC=10μA
60
BVCEO
IC=10mA
60
BVEBO
IE=10μA
5.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=300mA, IB=30mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=300mA, IB=30mA
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=300mA
50
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
Cib
VBE=2.0V, IC=0, f=1.0MHz
20
ton
VCC=30V, IC=150mA, IB1=15mA
30
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
150
MAX
50
50
0.4
1.6
1.3
2.6
8.0
30
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R1 (30-January 2012)