MPQ2906 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON QUAD TRANSISTOR

MPQ2906
MPQ2907
PNP SILICON QUAD TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2906,
MPQ2907 types are comprised of four independent
PNP silicon transistors mounted in a 14-pin DIP,
designed for small signal, general purpose amplifier
and switching applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
60
40
5.0
600
650
2.0
-65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
IEBO
VEB=3.0V
BVCBO
IC=10μA
60
BVCEO
IC=10mA
40
BVEBO
IE=10μA
5.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=300mA, IB=30mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=300mA, IB=30mA
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=2.0V, IC=0, f=1.0MHz
ton
VCC=30V, IC=150mA, IB1=15mA
30
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
150
MAX
50
50
0.4
1.6
1.3
2.6
8.0
30
hFE
VCE=10V, IC=10mA
hFE
VCE=10V, IC=150mA
hFE
VCE=10V, IC=300mA
MPQ2906
MIN MAX
35
-
40
-
30
-
MPQ2907
MIN MAX
75
-
100
-
50
-
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R1 (30-January 2012)