MPQ2222_12 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON QUAD TRANSISTOR

MPQ2222
MPQ2222A
NPN SILICON QUAD TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2222 and
MPQ2222A types are comprised of four independent
NPN silicon transistors mounted in a 14-pin DIP,
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-116 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (per transistor)
Power Dissipation (total package)
Operating and Storage Junction Temperature
Thermal Resistance (total package)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
MPQ2222 MPQ2222A
60
75
40
40
5.0
6.0
500
650
1.9
-65 to +150
66
UNITS
V
V
V
mA
mW
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
MPQ2222
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=50V
-
50
ICBO
VCB=60V
-
-
IEBO
VEB=3.0V
-
100
BVCBO
IC=10μA
60
-
BVCEO
IC=10mA
40
-
BVEBO
IE=10μA
5.0
-
VCE(SAT) IC=150mA, IB=15mA
-
0.4
VCE(SAT) IC=300mA, IB=30mA
-
1.6
VCE(SAT) IC=500mA, IB=50mA
-
-
VBE(SAT) IC=150mA, IB=15mA
-
1.3
VBE(SAT) IC=300mA, IB=30mA
-
2.6
VBE(SAT) IC=500mA, IB=50mA
-
-
hFE
VCE=10V, IC=0.1mA
-
-
hFE
VCE=10V, IC=1.0mA
-
-
hFE
VCE=10V, IC=10mA
75
-
hFE
VCE=10V, IC=150mA
100 300
hFE
VCE=10V, IC=300mA
30
-
hFE
VCE=10V, IC=500mA
-
-
fT
VCE=20V, IC=20mA, f=100MHz
200
-
Cob
VCB=10V, IE=0, f=1.0MHz
-
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
-
30
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA -
-
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
-
-
MPQ2222A
MIN MAX
-
-
-
10
-
100
75
-
40
-
6.0
-
-
0.3
-
-
-
1.0
0.6 1.2
-
-
-
2.0
35
-
50
-
75
-
100 300
-
-
40
-
200
-
-
8.0
-
30
-
35
-
285
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R2 (30-January 2012)