MJE13005 Datasheet, PDF (1/2 Pages) Motorola, Inc – 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

DATA SHEET
MJE13005
NPN SILICON
POWER TRANSISTOR
JEDEC TO-220 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power
switching applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VCEV
Emitter-Base Voltage
VEBO
Collector Current
IC
Peak Collector Current
ICM
Base Current
IB
Peak Base Current
IBM
Emitter Current
IE
Peak Emitter Current
IEM
Power Dissipation (TA=25°C)
PD
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
400
700
9.0
4.0
8.0
2.0
4.0
6.0
12
2.0
75
-65 to +150
62.5
1.67
UNITS
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=700V, VBE(OFF)=1.5V
ICEV
VCE=700V, VBE(OFF)=1.5V, TC=100°C
IEBO
VEB=9.0V
BVCEO
IC=10mA
400
VCE(SAT)
IC=1.0A, IB=0.2A
VCE(SAT)
IC=2.0A, IB=0.5A
VCE(SAT)
IC=4.0A, IB=1.0A
VBE(SAT)
IC=1.0A, IB=0.2A
VBE(SAT)
IC=2.0A, IB=0.5A
hFE
VCE=5.0V, IC=1.0A
10
hFE
VCE=5.0V, IC=2.0A
8.0
MAX
1.0
5.0
1.0
0.5
0.6
1.0
1.2
1.6
60
40
UNITS
mA
mA
mA
V
V
V
V
V
V
(Continued)
R1