MJ6503 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON POWER TRANSISTOR

DATA SHEET
MJ6503
PNP SILICON
POWER TRANSISTOR
JEDEC TO-3 CASE
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ6503 is a silicon PNP transistor designed for high voltage, high
speed switching in inductive circuits.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VCEV
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Peak Base Current
IBM
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ_JC
400
450
6.0
8.0
16
4.0
8.0
125
-65 to +200
1.4
UNITS
V
V
V
A
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=450V, VBE=1.5V
ICEV
VCE=450V, VBE=1.5V, TC=150°C
ICER
VCE=450V, RBE=50Ω, TC=100°C
IEBO
VEB=6.0V
BVCEO
IC=10mA
400
VCE(SAT)
IC=4.0A, IB=1.0A
VCE(SAT)
IC=8.0A, IB=3.0A
VCE(SAT)
IC=4.0A, IB=1.0A, TC=100°C
VBE(SAT)
IC=4.0A, IB=1.0A
VBE(SAT)
IC=4.0A, IB=1.0A, TC=100°C
hFE
VCE=5.0V, IC=2.0A
15
Is/b
See Figure 1
RBSOA
See Figure 2
Cob
VCB=10V, IE=0, f=1.0kHz
100
td
VCC=250V, IC=4.0A, IB1=1.0A
tr
VCC=250V, IC=4.0A, IB1=1.0A
ts
VCC=250V, IC=4.0A, IB1=1.0A, VBE(off)=5.0V
tf
VCC=250V, IC=4.0A, IB1=1.0A, VBE(off)=5.0V
(Continued)
MAX
0.5
2.5
3.0
1.0
1.5
5.0
2.5
1.5
1.5
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
400
pF
0.1
µs
0.5
µs
2.0
µs
0.5
µs
R1