MJ4032 Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

MJ4032 PNP
MJ4035 NPN
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJ4032, MJ4035
types are Complementary Silicon Power Darlington
Transistors designed for general purpose and amplifier
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
100
100
5.0
16
0.5
150
-65 to +200
1.17
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICER
VCE=100V, RBE=1.0kΩ
ICER
VCE=100V, RBE=1.0kΩ, TC=150°C
ICEO
VCE=50V
IEBO
VEB=5.0V
BVCEO
IC=100mA
100
VCE(SAT)
IC=10A, IB=40mA
VCE(SAT)
IC=16A, IB=80mA
VBE(ON)
VCE=3.0V, IC=10A
hFE
VCE=3.0V, IC=10A
1000
MAX
1.0
5.0
3.0
5.0
2.5
4.0
3.0
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
R0 (4-May 2009)