MCR716 Datasheet, PDF (1/2 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)

MCR716
MCR718
SURFACE MOUNT
SILICON CONTROLLED RECTIFIERS
4.0 AMP, 400 THRU 600 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MCR716 and
MCR718 are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=85°C)
IT(RMS)
Peak non-Repetitive Surge Current
(1/2 cycle Sine wave, 50Hz/60Hz)
I²t Value for Fusing, t=10ms
ITSM
I²t
Peak Gate Power, tp=1.0μs
Average Gate Power Dissipation
Peak Gate Current, tp=1.0μs
Critical Rate of Rise of On-State Current
PGM
PG _(AV)
IGM
di/dt
Storage Temperature
Tstg
Junction Temperature
TJ
MCR716 MCR718
400
600
4.0
15
1.1
0.5
0.1
0.2
50
-40 to +150
-40 to +125
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
10
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
200
IGT
VD=12V, RL=10Ω
1.0
38
75
IH
IT=50mA, RGK=1.0KΩ
0.25
2.0
VGT
VD=12V, RL=10Ω
0.55
0.8
VTM
ITM=8.0A, tp=380μs
1.6
1.8
dv/dt
VD=²/₃ VDRM, RGK=1.0KΩ, TC=125°C
10
UNITS
V
A
A
A²s
W
W
A
A/μs
°C
°C
UNITS
μA
μA
μA
mA
V
V
V/μs
R2 (21-January 2013)