MCR703A Datasheet, PDF (1/2 Pages) Motorola, Inc – Silicon Controlled Rectifiers

MCR703A MCR704A
MCR706A MCR708A
SURFACE MOUNT
SILICON CONTROLLED RECTIFIERS
4.0 AMP, 100 THRU 600 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MCR703A,
MCR704A, MCR706A, and MCR708A are epoxy
molded SCRs designed for sensing circuit and control
system applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL MCR703A MCR704A MCR706A MCR708A UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
100
200
400
600
V
RMS On-State Current (TC=85°C)
IT(RMS)
4.0
A
Peak non-Repetitive Surge Current
(1/2 cycle Sine wave, 50Hz/60Hz)
ITSM
15
A
I²t Value for Fusing, t=10ms
I²t
1.1
A²s
Peak Gate Power, tp=1.0μs
Average Gate Power Dissipation
Peak Gate Current, tp=1.0μs
Critical Rate of Rise of On-State Current
PGM
PG _(AV)
IGM
di/dt
0.5
W
0.1
W
0.2
A
50
A/μs
Storage Temperature
Tstg
Junction Temperature
TJ
-40 to +150
°C
-40 to +125
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
10
μA
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
200
μA
IGT
VD=12V, RL=10Ω
38
75
μA
IH
IT=50mA, RGK=1.0KΩ
0.25
2.0
mA
VGT
VD=12V, RL=10Ω
0.55
0.8
V
VTM
ITM=8.0A, tp=380μs
1.6
1.8
V
dv/dt
VD=²/₃ VDRM, RGK=1.0KΩ, TC=125°C
10
V/μs
R2 (21-January 2013)