H11C4M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PHOTO SCR OPTOCOUPLER

H11C4M
PHOTO SCR OPTOCOUPLER
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor H11C4M is a gallium-
arsenide infrared emitting Diode optically coupled
with a light activated silicon controlled rectifier in a
DIP-6 dual-in-line package. This device is designed
for applications requiring a high degree of isolation
between triggering and load circuits.
DIP-6 CASE
APPLICATIONS:
• Communications equipment
• Solid state relays
• Portable equipment
• Low power logic circuits requiring
a high degree of input/output isolation
MAXIMUM RATINGS: (TA=25°C)
Isolation Voltage
Isolation Resistance (@ VIO=500V)
Operating Temperature Range
Storage Temperature Range
MARKING: H11C4M
FEATURES:
• Forward current I_F=50mA MAX (Input)
• On-State current I_T(RMS)=150mA (Input)
• Reverse current I_R=10μA MAX (Input)
• Blocking voltage V_DRM, V_RRM=400V MAX (Output)
• Isolation test voltage 5000V_RMS
SYMBOL
VISO
RISO
TJ
Tstg
5000
10¹¹
-30 to +100
-55 to +125
UNITS
VRMS
Ω
°C
°C
INPUT MAXIMUM RATINGS (LED): (TA=25°C)
SYMBOL
Continuous Forward Current
IF
50
Continuous Reverse Voltage
VR
5.0
Peak Forward Surge Current (tp=1μs)
IFSM
1.0
Power Dissipation
PD
75
UNITS
mA
V
A
mW
OUTPUT MAXIMUM RATINGS (SCR): (TA=25°C) SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
400
Peak Reverse Gate Voltage
VRGM
6.0
RMS On-State Current
IT(RMS)
150
Peak On-State Current (tp=100μs)
IT
10
Peak One Cycle Surge (tp=10ms)
ITSM
5.0
INPUT ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
VR=3.0V
VF
IF=10mA
CJ
VR=0V, f=1.0MHz
50
MAX
10
1.5
UNITS
V
V
mA
A
A
UNITS
μA
V
pF
R2 (8-December 2008)