D44E1 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN DARLINGTON POWER TRANSISTORS

D44E1
D44E2
D44E3
SILICON
NPN DARLINGTON
POWER TRANSISTORS
TO-220 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D44E series
devices are silicon NPN Darlington power transistors,
manufactured by the epitaxial base process, with
2 integrated resistors and 1 diode for stability and
protection. These devices are designed for switching
and output applications where high gain is desired.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEO
VCES
VEBO
IC
IB
PD
TJ, Tstg
Θ_JC
D44E1 D44E2 D44E3
40
60
80
40
60
80
7.0
10
1.0
80
-65 to +150
1.56
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICES
VCE=Rated VCES
IEBO
VEB=7.0V
BVCEO
IC=100mA (D44E1)
40
BVCEO
IC=100mA (D44E2)
60
BVCEO
IC=100mA (D44E3)
80
VCE(SAT) IC=5.0A, IB=10mA
VCE(SAT) IC=10A, IB=20mA
VBE(SAT) IC=5.0A, IB=10mA
hFE
VCE=5.0V, IC=5.0A
1000
Cob
VCB=10V, IE=0, f=1.0MHz
ton
IC=10A, IB1=20mA
1.0
toff
IC=10A, IB1=IB2=20mA
2.5
MAX
500
5.0
1.5
3.0
2.5
200
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
μA
mA
V
V
V
V
V
V
pF
μs
μs
R1 (4-March 2014)