D44C1 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN POWER TRANSISTORS

D44C SERIES
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D44C series
devices are silicon NPN power transistors designed for
general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JC
Θ_JA
D44C1 D44C4
D44C2 D44C5
D44C3 D44C6
40
55
D44C7
D44C8
D44C9
70
30
45
60
5.0
4.0
6.0
30
-65 to +150
4.2
75
D44C10
D44C11
D44C12
90
80
UNITS
V
V
V
A
A
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICES
VCE=Rated VCES
IEBO
VEB=5.0V
BVCEO
IC=100mA (D44C1, 2, 3)
30
BVCEO
IC=100mA (D44C4, 5, 6)
45
BVCEO
IC=100mA (D44C7, 8, 9)
60
BVCEO
IC=100mA (D44C10, 11, 12)
80
VCE(SAT) IC=1.0A, IB=50mA
(D44C2, 3, 5, 6, 8, 9, 11, 12)
VCE(SAT) IC=1.0A, IB=100mA (D44C1, 4, 7, 10)
VBE(SAT) IC=1.0A, IB=100mA
Cob
VCB=10V, IE=0, f=1.0MHz
fT
VCE=4.0V, IC=20mA
50
td+tr
IC=1.0A, IB1=100mA
100
ts
IC=1.0A, IB1=IB2=100mA
500
tf
IC=1.0A, IB1=IB2=100mA
75
MAX
10
100
0.5
0.5
1.3
100
UNITS
μA
μA
V
V
V
V
V
V
V
pF
MHz
ns
ns
ns
R1 (4-March 2014)