D41D1 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON POWER TRANSISTOR

D41D1
D41D2
D41D4
D41D5
D41D7 D41D13
D41D8 D41D14
D41D10
D41D11
PNP SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D41D series types
are PNP silicon power transistors designed for amplifier
and switching applications. The NPN complementary
types are the D40D series.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JC
D41D1
D41D2
45
30
D41D4
D41D5
60
D41D7
D41D8
75
45
60
5.0
1.0
1.5
6.25
-65 to +150
20
D41D10
D41D11
D41D13
D41D14
90
75
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICES
VCE=Rated VCES
IEBO
VEB=5.0V
BVCEO
lC=10mA (D41D1, 2)
30
BVCEO
lC=10mA (D41D4, 5)
45
BVCEO
lC=10mA (D41D7, 8)
60
BVCEO
lC=10mA (D41D10, 11, 13, 14)
75
VCE(SAT) lC=500mA, IB=50mA (D41D1, 2, 4, 5)
VCE(SAT) lC=500mA, IB=50mA (D41D7, 8, 10, 11, 13, 14)
VBE(SAT) lC=500mA, IB=50mA
MAX
100
100
0.5
1.0
1.5
UNITS
nA
nA
V
V
V
V
V
V
V
D41D1
D41D4
D41D5
D41D7
D41D8
D41D10
D41D11
D41D13
D41D2
D41D14
MIN MAX MIN MAX MIN MAX
hFE
VCE=2.0V, IC=100mA
50 150 120 300 120 360
hFE
VCE=2.0V, IC=1.0A
(Except D40D13, 14)
10 -
20 -
10 -
R1 (23-January 2012)