D40K Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON DARLINGTON POWER TRANSISTOR

D40K SERIES
NPN SILICON
DARLINGTON POWER
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D40K series types
are NPN silicon Darlington power transistors designed
for general purpose amplifier applications where high
gain is required.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
D40K1, 3
30
D40K2, 4
50
30
50
13
2.0
3.0
0.2
1.67
10
-65 to +150
75
12.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICES
VCE=Rated VCES
IEBO
VEB=13V
BVCEO
lC=10mA (D40K1, 3)
30
BVCEO
lC=10mA (D40K2, 4)
50
VCE(SAT)
lC=1.5A, IB=3.0mA (D40K1, 2)
VCE(SAT)
lC=1.0A, IB=2.0mA (D40K3, 4)
VBE(SAT)
lC=1.5A, IB=3.0mA (D40K1, 2)
VBE(SAT)
lC=1.0A, IB=2.0mA (D40K3, 4)
hFE
VCE=5.0V, IC=200mA
10K
hFE
VCE=5.0V, IC=1.5A (D40K1, 2)
1K
hFE
VCE=5.0V, IC=1.0A (D40K3, 4)
1K
fT
VCE=5.0V, lC=20mA
75
Ccb
VCB=10V, f=1.0MHz
MAX
500
100
1.5
1.5
2.5
2.5
10
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
R1 (23-January 2012)