D40D1 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN POWER TRANSISTORS

D40D1
D40D2
D40D3
D40D4
D40D5 D40D11
D40D7 D40D13
D40D8 D40D14
D40D10
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D40D series types
are NPN silicon power transistors designed for amplifier
and switching applications. The PNP complementary
types are the D41D series.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JC
D40D1
D40D2
D40D3
45
30
D40D4
D40D5
60
D40D7
D40D8
75
45
60
5.0
1.0
1.5
6.25
-65 to +150
20
D40D10
D40D11
D40D13
D40D14
90
75
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICES
VCE=Rated VCES
IEBO
VEB=5.0V
BVCEO
lC=10mA (D40D1, 2, 3)
30
BVCEO
lC=10mA (D40D4, 5)
45
BVCEO
lC=10mA (D40D7, 8)
60
BVCEO
lC=10mA (D40D10, 11, 13, 14)
75
VCE(SAT) lC=500mA, IB=50mA (D40D1, 2, 4, 5)
VCE(SAT) lC=500mA, IB=50mA (D40D7, 8, 10, 11, 13, 14)
VBE(SAT) lC=500mA, IB=50mA
MAX
100
100
0.5
1.0
1.5
UNITS
nA
nA
V
V
V
V
V
V
V
D40D1
D40D4
D40D5
D40D7
D40D8
D40D10
D40D11
D40D13
D40D2
D40D3
D40D14
MIN MAX MIN MAX MIN MAX MIN MAX
hFE
VCE=2.0V, IC=100mA
50 150 120 360 290 -
120 360
hFE
VCE=2.0V, IC=1.0A
(Except D40D13, 14)
10 -
20 -
10 -
10 -
R1 (23-January 2012)