D40C1 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON DARLINGTON POWER TRANSISTOR

D40C1
NPN SILICON
DARLINGTON POWER
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D40C1 type is an
NPN silicon Darlington power transistor designed for
general purpose amplifier applications where high gain
is required.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JC
30
30
13
0.5
1.0
6.25
-55 to +150
20
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICES
VCE=30V
ICBO
VCE=30V, TC=150°C
IEBO
VEB=13V
BVCEO
lC=10mA
30
VCE(SAT)
lC=500mA, IB=0.5mA
VBE(SAT)
lC=500mA, IB=0.5mA
hFE
VCE=5.0V, IC=200mA
10K
fT
VCE=5.0V, lC=20mA
80
Ccb
VCB=10V, f=1.0MHz
ton
lC=1.0A, IB1=1.0mA
120
toff
lC=1.0A, IB1=IB2=1.0mA
1200
MAX
500
20
100
1.5
2.0
70K
10
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
nA
μA
nA
V
V
V
MHz
pF
ns
ns
R1 (23-January 2012)