CZTA96_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR

CZTA96
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA96 type is
a surface mount epoxy molded PNP silicon planar
epitaxial transistors designed for extremely high voltage
applications.
SOT-223 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
450
450
6.0
500
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=400V
IEBO
VBE=4.0V
BVCBO
IC=100µA
450
500
BVCEO
IC=1.0mA
450
490
BVEBO
IE=10µA
6.0
9.7
VCE(SAT)
IC=1.0mA, IB=0.1mA
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
0.15
VBE(SAT)
IC=10mA, IB=1.0mA
hFE
VCE=10V, IC=1.0mA
40
hFE
VCE=10V, IC=10mA
50
120
hFE
VCE=10V, IC=50mA
45
hFE
VCE=10V, IC=100mA
25
35
fT
VCE=10V, IC=10mA, f=10MHz
20
Cob
VCB=20V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
MAX
100
100
0.20
0.30
0.50
1.0
200
7.0
130
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
R4 (1-March 2010)