CZT955_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR

CZT955
SURFACE MOUNT SILICON
HIGH CURRENT
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT955 is a
silicon high current PNP transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
180
140
7.0
4.0
10
3.0
-65 to +150
41.7
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=150V
ICBO
VCB=150V, TA=100°C
ICER
VCE=150V, RBE≤1.0kΩ
IEBO
VEB=6.0V
BVCBO
IC=100μA
180
200
BVCER
IC=1.0μA, RBE≤1.0kΩ
180
200
BVCEO
IC=10mA
140
160
BVEBO
IE=100μA
7.0
8.0
VCE(SAT) IC=100mA, IB=5.0mA
40
VCE(SAT) IC=0.5A, IB=50mA
55
VCE(SAT) IC=1.0A, IB=100mA
85
VCE(SAT) IC=3.0A, IB=300mA
210
VBE(SAT) IC=3.0A, IB=300mA
0.96
VBE(ON)
VCE=5.0V, IC=3.0A
830
hFE
VCE=5.0V, IC=10mA
100
250
hFE
VCE=5.0V, IC=1.0A
100
220
hFE
VCE=5.0V, IC=3.0A
35
hFE
VCE=5.0V, IC=10A
5.0
fT
VCE=10V, IC=100mA, f=50MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
33
ton
VCC=50V, IC=1.0A, IB1=IB2=0.1A
25
toff
VCC=50V, IC=1.0A, IB1=IB2=0.1A
410
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in² (minimum)
MAX
20
0.5
20
10
60
80
120
360
1.04
930
300
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
mV
V
mV
MHz
pF
ns
ns
R2 (11-June 2013)