CZT953_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR

CZT953
SURFACE MOUNT SILICON
HIGH CURRENT
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT953 is a
silicon high current PNP transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
140
100
6.0
5.0
3.0
-65 to +150
41.7
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=100V
ICBO
VCB=100V, TA=100°C
ICER
VCE=100V, RBE≤1.0kΩ
IEBO
VEB=6.0V
BVCBO
IC=100μA
140
170
BVCER
IC=10mA, RBE≤1.0kΩ
140
150
BVCEO
IC=1.0mA (Note 2)
100
120
BVEBO
IE=100μA
6.0
9.0
VCE(SAT) IC=100mA, IB=10mA
20
VCE(SAT) IC=1.0A, IB=100mA
90
VCE(SAT) IC=2.0A, IB=200mA
170
VCE(SAT) IC=4.0A, IB=400mA
320
VBE(SAT) IC=4.0A, IB=400mA
1.0
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=1.0A
100
200
hFE
VCE=1.0V, IC=3.0A
50
70
hFE
VCE=1.0V, IC=4.0A
30
45
hFE
VCE=1.0V, IC=10A
15
fT
VCE=10V, IC=100mA, f=50MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
45
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in² (minimum)
(2) Pulse Test: Pulse Width = 100μs
MAX
50
1.0
50
10
140
50
120
220
420
1.2
300
UNITS
V
V
V
A
W
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
mV
V
MHz
pF
R5 (11-June 2013)