CZT853_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

CZT853
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT853 type is
a high current NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
PNP Complement: CZT953
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
200
100
6.0
6.0
3.0
-65 to +150
41.7
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=150V
ICBO
VCB=150V, TA=100°C
ICER
VCE=150V, RBE≤1.0kΩ
IEBO
VEB=6.0V
BVCBO
IC=100μA
200
220
BVCER
IC=10mA, RBE≤1.0kΩ
200
210
BVCEO
IC=10mA
100
110
BVEBO
IE=100μA
6.0
8.0
VCE(SAT) IC=100mA, IB=5.0mA
22
VCE(SAT) IC=2.0A, IB=100mA
135
VCE(SAT) IC=5.0A, IB=500mA
VBE(SAT) IC=5.0A, IB=500mA
hFE
VCE=2.0V, IC=10mA
100
hFE
VCE=2.0V, IC=2.0A
100
200
hFE
VCE=2.0V, IC=4.0A
50
100
hFE
VCE=2.0V, IC=10A
20
30
fT
VCE=10V, IC=100mA, f=50MHz
190
Cob
VCB=10V, IE=0, f=1.0MHz
38
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in² (minimum)
MAX
10
1.0
10
10
50
170
340
1.25
300
UNITS
V
V
V
A
W
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
V
MHz
pF
R2 (1-March 2010)