CZT7090LE Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR

CZT7090LE
ENHANCED SPECIFICATION
SURFACE MOUNT
LOW VCE(SAT) PNP
SILICON POWER TRANSISTOR
SOT-223 CASE
APPLICATIONS:
• Power Management / DC-DC Converters
• Portable and Battery Powered Products
• LAN Equipment / Motor Controllers
♦
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
♦ ICBO
VCB=50V
ICBO
♦
♦
IEBO
BVCBO
♦ BVCEO
♦ BVEBO
♦
♦
♦
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCB=50V, TA=100°C
VEB=5.0V
IC=100μA
IC=10mA
IE=100μA
IC=500mA, IB=5.0mA
IC=1.0A, IB=10mA
IC=2.0A, IB=50mA
VBE(SAT) IC=2.0A, IB=100mA
hFE
VCE=2.0V, IC=10mA
♦
hFE
hFE
VCE=2.0V, IC=500mA
VCE=2.0V, IC=1.0A
hFE
VCE=2.0V, IC=2.0A
hFE
VCE=2.0V, IC=3.0A
Cob
VCB=10V, IE=0, f=1.0MHz
fT
VCE=5.0V, IC=50mA, f=50MHz
♦ Enhanced specification
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT7090LE is an
Enhanced Specification Low VCE(SAT) PNP Silicon
Power Transistor packaged in an industry standard
SOT-223 case. High Collector Current, coupled with a
Low Saturation Voltage, make this an excellent choice
for industrial and consumer applications where electrical
and thermal operational efficiency are top priorities.
MARKING: FULL PART NUMBER
FEATURES:
• Low VCE(SAT) PNP Transistor
• High Current (IC=3.0A MAX)
• VCE(SAT)=0.132V TYP @ IC=2.0A
• SOT-223 Surface Mount Package
• Complementary NPN device: CZT3090LE
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
60
50
6.0
3.0
5.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
MIN
TYP
MAX
UNITS
50
nA
10
µA
50
nA
60
V
50
V
6.0
V
76
175
mV
124
250
mV
132
300
mV
0.888
1.0
V
300
363
800
250
314
250
281
150
228
100
177
35
pF
100
MHz
R1 (1-March 2010)