CZT5551HC_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

CZT5551HC
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551HC type
is a high current NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for high voltage and
high current amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
180
160
6.0
1.0
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=4.0V
BVCBO
IC=100µA
180
BVCEO
IC=1.0mA
160
BVEBO
IE=10µA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
hFE
VCE=5.0V, IC=50mA
30
hFE
VCE=10V, IC=1.0A
10
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
50
50
50
0.15
0.20
1.00
1.00
250
15
UNITS
V
V
V
A
W
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
R1 (1-March 2010)