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CZT5551E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR
CZT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551E is an
NPN Silicon Transistor, packaged in an SOT-223 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA MAX
• Low Saturation Voltage 100mV MAX @ 50mA
• Complementary Device: CZT5401E
• SOT-223 Surface Mount Package
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
250
220
6.0
600
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=4.0V
♦ BVCBO
IC=100µA
250
♦ BVCEO
IC=1.0mA
220
BVEBO
IE=10μA
6.0
♦ VCE(SAT)
IC=10mA, IB=1.0mA
♦ VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
♦ Enhanced specification
MAX
50
50
50
75
100
1.00
1.00
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
R1 (1-March 2010)