CZT5551E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

CZT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-223 CASE
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551E
is an NPN Silicon Transistor, packaged in an
SOT-223 case, designed for general purpose
amplifier applications requiring high breakdown
voltage.
MARKING CODE: FULL PART NUMBER
FEATURES:
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA Max
• Low Saturation Voltage 100mV Max @ 50mA
• Complementary Device CZT5401E
• SOT-223 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ ^{Collector-Base Voltage}
♦ ^{Collector-Emitter Voltage}
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
250
220
6.0
600
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=4.0V
♦ BVCBO
IC=100μA
250
♦ ^BVCEO
IC=1.0mA
220
BVEBO
IE=10μA
6.0
♦ VCE(SAT)
IC=10mA, IB=1.0mA
♦ ^VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
♦ ^{Enhanced Specification}
MAX
50
50
50
75
100
1.00
1.00
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
R0 (10-May 2006)