CZT5551 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

CZT5551
Central^TM
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
voltage amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
180
160
6.0
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=120V
VCB=120V, TA=100^oC
VEB=4.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
MIN
MAX
50
50
50
180
160
6.0
0.15
0.20
1.00
1.00
80
80
250
30
UNITS
V
V
V
mA
W
o_C
o_C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
316