CZT5401E_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR

CZT5401E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5401E is a
PNP Silicon Transistor, packaged in an SOT-223 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
FEATURES:
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA MAX
• Low Saturation Voltage 150mV MAX @ 50mA
• Complementary Device: CZT5551E
• SOT-223 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
250
220
7.0
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=3.0V
♦ BVCBO
IC=100µA
250
♦ BVCEO
IC=1.0mA
220
♦ _BVEBO
IE=10µA
7.0
♦ _VCE(SAT)
IC=10mA, IB=1.0mA
♦ _VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
♦ Enhanced specification
MAX
50
50
50
100
150
1.00
1.00
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
R1 (1-March 2010)