CZT5338_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON POWER TRANSISTOR

CZT5338
SURFACE MOUNT
NPN SILICON
POWER TRANSISTOR
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5338 type is
an NPN silicon power transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for applications requiring
extremely high current amplification and switching
capability.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ_JA
100
100
6.0
5.0
1.0
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=100V
ICEO
VCE=90V
IEBO
VBE=6.0V
BVCEO
IC=50mA
100
VCE(SAT) IC=2.0A, IB=200mA
VCE(SAT) IC=5.0A, IB=500mA
VBE(SAT) IC=2.0A, IB=200mA
VBE(SAT) IC=5.0A, IB=500mA
hFE
VCE=2.0V, IC=500mA
30
hFE
VCE=2.0V, IC=2.0A
30
hFE
VCE=2.0V, IC=5.0A
20
fT
VCE=10V, IC=500mA, f=10MHz
30
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=2.0V, IC=0, f=1.0MHz
td
VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA
tr
VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA
ts
VCC=40V, IC=2.0A, IB1=IB2=200mA
tf
VCC=40V, IC=2.0A, IB1=IB2=200mA
MAX
10
100
100
0.7
1.2
1.2
1.8
120
250
1000
100
100
2.0
200
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
µA
µA
µA
V
V
V
V
V
MHz
pF
pF
ns
ns
µs
ns
R5 (1-March 2010)